collector saturation voltage

См. также в других словарях:

• Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

• ГОСТ 20003-74: Транзисторы биполярные. Термины, определения и буквенные обозначения параметров — Терминология ГОСТ 20003 74: Транзисторы биполярные. Термины, определения и буквенные обозначения параметров оригинал документа: 1 При заданном обратном токе эмиттера в токе коллектора, равном нулю, UЭБ0, UEB0. 2 При заданном токе коллектора и… …   Словарь-справочник терминов нормативно-технической документации

• Operational amplifier — A Signetics μa741 operational amplifier, one of the most successful op amps. An operational amplifier ( op amp ) is a DC coupled high gain electronic voltage amplifier with a differential input and, usually, a single ended output.[1] An op amp… …   Wikipedia

• Current mirror — A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current being copied can be, and… …   Wikipedia

• Bipolar transistor biasing — Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more elaborate biasing arrangements are …   Wikipedia

• Darlington transistor — Circuit diagram of a Darlington pair using NPN transistors In electronics, the Darlington transistor (often called a Darlington pair) is a compound structure consisting of two bipolar transistors (either integrated or separated devices) connected …   Wikipedia

• Biasing — This article is about biasing in electronics. For other uses, see Biasing (disambiguation). Biasing in electronics is the method of establishing predetermined voltages and/or currents at various points of an electronic circuit to set an… …   Wikipedia

• напряжение — 3.10 напряжение: Отношение растягивающего усилия к площади поперечного сечения звена при его номинальных размерах. Источник: ГОСТ 30188 97: Цепи грузоподъемные калиброванные высокопрочные. Технические условия …   Словарь-справочник терминов нормативно-технической документации

• MOS composite static induction thyristor/CSMT — MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI thyristor. The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a… …   Wikipedia

• electron tube — an electronic device that consists, typically, of a sealed glass bulb containing two or more electrodes: used to generate, amplify, and rectify electric oscillations and alternating currents. Also called electronic tube. Cf. gas tube, vacuum tube …   Universalium

• Resistor–transistor logic — (RTL) is a class of digital circuits built using resistors as the input network and bipolar junction transistors (BJTs) as switching devices. RTL is the earliest class of transistorized digital logic circuit used; other classes include… …   Wikipedia